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Advanced Power Electronics

AP13N50I Datasheet Preview

AP13N50I Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP13N50I
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
BVDSS
RDS(ON)
ID
500V
0.52Ω
14A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
±30
14
9
50
39
0.31
98
14
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
3.2
65
Units
/W
/W
Data and specifications subject to change without notice
201017072-1/4




Advanced Power Electronics

AP13N50I Datasheet Preview

AP13N50I Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP13N50I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=7A
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=400V, VGS=0V
VGS=±30V
ID=14A
VDS=200V
VGS=10V
VDD=200V
ID=7A
RG=50Ω,VGS=10V
RD=25Ω
VGS=0V
VDS=30V
f=1.0MHz
500 -
-
- - 0.52
2-4
- 6.3 -
- - 100
- - ±100
- 48 77
-9-
- 18 -
- 22
-
- 49
-
- 327 -
- 115 -
- 1980 3170
- 210 -
-6-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=14A, VGS=0V
IS=14A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 440 - ns
- 6.9 - uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4



Part Number AP13N50I
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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AP13N50I Datasheet PDF





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