AP13N50I
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for mercialindustrial through hole applications.
BVDSS RDS(ON) ID
500V 0.52Ω
14A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
EAS IAR TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Rating 500 ±30 14 9 50 39 0.31 98 14
-55 to 150 -55 to 150
Units V V A A A W
W/℃ m J A ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 3.2 65
Units ℃/W ℃/W
Data and...
