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Advanced Power Electronics

AP15N03GI Datasheet Preview

AP15N03GI Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP15N03GI
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
BVDSS
RDS(ON)
ID
30V
80mΩ
15A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
PD@TC=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
15
9
50
20.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
6.0
65
Unit
/W
/W
1
200904141




Advanced Power Electronics

AP15N03GI Datasheet Preview

AP15N03GI Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP15N03GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=8A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=10V, ID=8A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
ID=8A
VDS=24V
VGS=5V
VDS=15V
ID=8A
RG=3.3Ω,VGS=10V
RD=1.9Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- - 80 m
- - 100 m
1 - 3V
-7-S
` - 1 uA
- - +100 nA
- 5 8 nC
- 1 - nC
- 3 - nC
- 5 - ns
- 22 - ns
- 12 - ns
- 3.3 -
ns
- 160 260 pF
- 107 -
pF
- 32 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=8A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 37 - ns
- 47 - nC
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP15N03GI
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
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AP15N03GI Datasheet PDF






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