Datasheet Details
| Part number | AP15N03GJ-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 210.45 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP15N03GJ-HF AP15N03GH-HF Datasheet (PDF) |
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Overview: AP15N03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | AP15N03GJ-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 210.45 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP15N03GJ-HF AP15N03GH-HF Datasheet (PDF) |
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TO-252 package is widely preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP15N03GJ) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 +20 15 9 50 26 0.21 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.8 62.5 110 Unit ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 1 200811193 AP15N03GH/J-HF Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA 2 Min.
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