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AP15N03GI Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP15N03GI RoHS-pliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for mercial-industrial through hole applications.

BVDSS RDS(ON) ID 30V 80mΩ 15A GD S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 15 9 50 20.8 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 6.0 65 Unit ℃/W ℃/W 1 200904141 AP15N03GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

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