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AP15N03GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP15N03GJ) is available for low-profile applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP15N03GJ-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP15N03GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP15N03GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03GJ) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 15 9 50 28 0.