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Advanced Power Electronics

AP15N03GJ Datasheet Preview

AP15N03GJ Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP15N03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching
Description
D
G
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15N03GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
80mΩ
15A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
30
± 20
15
9
50
28
0.22
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4.8
110
Unit
/W
/W
Data & specifications subject to change without notice
200227032




Advanced Power Electronics

AP15N03GJ Datasheet Preview

AP15N03GJ Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

www.DataSheet4U.com
AP15N03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=8A
VGS=4.5V, ID=6A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=18A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS= ± 20V
ID=8A
VDS=24V
VGS=5V
VDS=15V
ID=8A
RG=3.4Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=1.9Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.037 - V/
- - 80 mΩ
- - 100 mΩ
1 - 3V
- 16 -
S
` - 1 uA
- - 25 uA
- - ±100 nA
- 4.6
nC
- 1.1
nC
-3
nC
- 4.9 - ns
- 22.5 - ns
- 12.2 - ns
- 3.3 - ns
- 160 - pF
- 107 - pF
- 32 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=15A, VGS=0V
Min. Typ. Max. Units
- - 15 A
- - 50 A
- - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.


Part Number AP15N03GJ
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
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