AP2530AGY-HF mosfet equivalent, n and p-channel enhancement mode power mosfet.
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
G1 G2
S1
30V 72mΩ 3.3A -30V 150mΩ -2.3A
D2
S2
Absolute Maximum Ratings@Tj=25o.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for commercial surface mount applications.
BVDSS RDS(ON.
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