Datasheet4U Logo Datasheet4U.com

AP2530GY - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial applications.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP2530GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS Compliant SOT-26 S2 G1 S1 D1 G2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 30V 72mΩ 3.3A -30V 150mΩ -2.3A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings www.DataSheet.