Datasheet Details
| Part number | AP2530GY |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 146.86 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2530GY_AdvancedPowerElectronics.pdf |
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Overview: AP2530GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS pliant SOT-26 S2 G1 S1 D1 G2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 30V 72mΩ 3.3A -30V 150mΩ -2.
| Part number | AP2530GY |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 146.86 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2530GY_AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all mercial-industrial applications.
G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings .DataSheet.net/ Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 3.3 2.6 10 1.14 0.01 -55 to 150 -55 to 150 P-channel -30 ±20 -2.3 -1.8 -10 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
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