Datasheet Details
| Part number | AP2530AGY-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 118.99 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2530AGY-HF-AdvancedPowerElectronics.pdf |
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Overview: Advanced Power Electronics Corp. AP2530AGY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Performance D2 S1 D1 ▼ Surface Mount Package ▼ RoHS pliant &.
| Part number | AP2530AGY-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 118.99 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2530AGY-HF-AdvancedPowerElectronics.pdf |
|
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Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for mercial surface mount applications.
BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 30V 72mΩ 3.3A -30V 150mΩ -2.3A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 +20 3.3 -2.3 2.7 -1.8 12 -10 1.136 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 110 Unit ℃/W 1 201501212 AP2530AGY-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
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