Datasheet Details
| Part number | AP2532GY |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 113.26 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2532GY-AdvancedPowerElectronics.pdf |
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Overview: Advanced Power Electronics Corp. AP2532GY RoHS-pliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Performance ▼ Surface Mount Package D2 S1 D1 SOT-26 G2 S2.
| Part number | AP2532GY |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 113.26 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP2532GY-AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for mercial surface mount applications.
N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 30V 130mΩ 2.4A -30V 250mΩ -1.8A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 30 -30 ±20 ±20 2.4 -1.8 1.9 -1.4 10 -10 1.14 0.01 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 110 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 201018074-1/7 AP2532GY N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
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