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Advanced Power Electronics
Advanced Power Electronics

AP2530GY Datasheet Preview

AP2530GY Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2530GY pdf
Advanced Power
Electronics Corp.
AP2530GY
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Low Gate Charge
Low On-resistance
Surface Mount Package
RoHS Compliant
Description
D2
S1
D1
SOT-26
G2
S2
G1
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
D1
The SOT-26 package is universally used for all commercial-industrial G1
applications.
G2
S1
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
www.DataSheet.net/
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
3.3 -2.3
2.6 -1.8
10 -10
1.14
0.01
-55 to 150
-55 to 150
Max.
Value
110
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
200425051-1/7
Datasheet pdf - http://www.DataSheet4U.co.kr/



Advanced Power Electronics
Advanced Power Electronics

AP2530GY Datasheet Preview

AP2530GY Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2530GY pdf
AP2530GY
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=3A
VGS=4.5V, ID=2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=5V, ID=3A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=3A
VDS=25V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
www.DataSheet.net/
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 - - V
- 0.02 - V/
- - 72 mΩ
- - 125 mΩ
1 - 3V
-4-S
- - 1 uA
- - 25 uA
- - ±100 nA
- 3 5 nC
- 1 - nC
- 2 - nC
- 6 - ns
- 8 - ns
- 11 - ns
- 2 - ns
- 170 270 pF
- 50 - pF
- 35 - pF
- 0.5 0.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=0.9A, VGS=0V
IS=3A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 14 - ns
- 7 - nC
2/7
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number AP2530GY
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 7 Pages
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