AP2532GY mosfet equivalent, n and p-channel enhancement mode power mosfet.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
30V 130mΩ
2.4A -30V 250mΩ -1.8A
D1 D2
G1 G2 S1
S2
Absolute Maximum R.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface mount applications.
N-CH P-CH
B.
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