AP2533GY-HF mosfet equivalent, n and p-channel enhancement mode power mosfet.
N-CH P-CH
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
G2
S1
16V 150mΩ
2.2A -16V 320mΩ -1.5A
D2
S2
Absolute Maximum Rat.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface mount applications.
N-CH P-CH
G1.
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