Datasheet Details
| Part number | AP25P15GS-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.24 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| Part number | AP25P15GS-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.24 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -140 +20 -23 -14.5 -80 96 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.3 40 Units ℃/W ℃/W 1 200908191 Data and specifications subject to change without notice AP25P15GS-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-12A VDS=VGS, ID=-250uA VDS=-10V, ID=-12A VDS=-120V, VGS=0V VGS= +20V, VDS=0V ID=-18A VDS=-80V VGS=-10V VDS=-50V ID=-18A RG=3.3Ω,VGS=-10V RD=2.8Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Min.
AP25P15GS-HF RoHS-compliant Product Advanced Power Electronics Corp.
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