AP2606CMT Datasheet | Advanced Power Electronics Corp

Description AP2606C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) ID4 25V 0.8mΩ 280A PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol .Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V4 Drain Current, VGS @ 10V4(Package Limited) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5 Storage Temperature Range Operating Junction Temperature Range 25 +20 280 100 60 50.5 650 104 5 45 -55 to 150 -55 to 150 V V A A A A A W W m J ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 1.2 25 Unit ℃/W ℃/W 1 201507091 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source...