AP2763I-A
AP2763I-A is N-Channel Enhancement Mode Power MOSFET manufactured by Advanced Power Electronics Corp.
tion
AP2763 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overe voltage surge G and sag in the toughest power system with the best bination of fast D S switching,ruggedized design and cost-effectiveness.
TO-220CFM(I)
Absolute Maximum Ratings
.Data Sheet.co.kr
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
Rating 750 ±30 8.0 5.0 30 50 0.4
Units V V A A A W W/ ℃ m J A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
32 8.0 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.5 65 Units ℃/W ℃/W
Data & specifications subject to change without notice
1 200810233
Datasheet pdf
- http://..net/
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1m A
Min. 750 2
- Typ. 0.9 7 47 8.5 20 15 13 74 21 140 9 2.6
Max. Units 1.45 4 10 ±100 75 3.9 V V/℃ Ω V S u A n A n C n C n C ns ns ns ns p F p F p F Ω
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1m A
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
VGS=10V, ID=4.0A VDS=VGS, ID=250u A VDS=10V, ID=4.0A VDS=750V, VGS=0V VGS=±30V ID=4A VDS=600V VGS=10V VDD=360V ID=4A RG=10Ω,VGS=10V RD=90Ω VGS=0V VDS=25V f=1.0MHz
.Data...