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AP30N30WI - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .

The TO-3PF fullpack eliminates the need for additional insulating hardware in commercial-industrial applications.

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Other Datasheets by Advanced Power Electronics Corp

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Full PDF Text Transcription

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AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 250V 68mΩ 30A Description AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3PF fullpack eliminates the need for additional insulating hardware in commercial-industrial applications. G D S TO-3PF Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 250 ±30 30 120 83 0.
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