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AP30N30W Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .

The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device.

G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Parameter Rating 250 ±30 36 23 144 208 1.7 3 Units V V A A A W W/℃ mJ A ℃ ℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Overview

AP30N30W Pb Free Plating Product Advanced Power Electronics Corp.

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