| Part number | AP30N30W |
|---|---|
| Datasheet | AP30N30W_AdvancedPowerElectronics.pdf |
| File Size | 141.39 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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AP30N30 from APEC provide the designer with the best bination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for mercial & industrial applications with higher power level preclusion than TO-220 device. G D S TO-3P Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage.
See all Advanced Power Electronics Corp datasheets
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| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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| AP30G40GEO-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
