Datasheet Details
| Part number | AP30N30WI |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 109.87 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP30N30WI Datasheet
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| Part number | AP30N30WI |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 109.87 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP30N30WI Datasheet
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AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .
The TO-3PF fullpack eliminates the need for additional insulating hardware in commercial-industrial applications.
G D S TO-3PF Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 250 ±30 30 120 83 0.7 3 Units V V A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
| AP30N30W | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120CSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120SW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G40AEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G40GEO-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |