Datasheet Details
| Part number | AP3801GM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 187.82 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP3801GM Datasheet
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| Part number | AP3801GM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 187.82 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP3801GM Datasheet
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The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 20 -5 -4 -20 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
www.DataSheet4U.com AP3801GM Pb Free Plating Product Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
| AP3801GM-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP30G120CSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120SW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G40AEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |