AP3801GM-HF datasheet by Advanced Power Electronics Corp.
| Part number | AP3801GM-HF |
|---|---|
| Datasheet | AP3801GM-HF-AdvancedPowerElectronics.pdf |
| File Size | 88.91 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. 10 6.5 2 3 6.5 8 20.5 6.5 510 75 70 5 Max.
View all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP3801GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3800YT | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120CSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120SW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G40AEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
