Datasheet Details
| Part number | AP4226GM-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 80.68 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP4226GM-HF Download (PDF) |
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Overview: AP4226GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package ▼ RoHS Compliant SO-8 G1 S1 D2 D1 D1 G2 S2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 18mΩ 8.
| Part number | AP4226GM-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 80.68 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP4226GM-HF Download (PDF) |
|
|
|
D1 D2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200806092 Free Datasheet http://www.datasheet4u.com/ AP4226GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
30 1 - Typ.
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