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AP4501SM Datasheet POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 6 4.8 20 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5.3 -4.7 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RthJA Parameter Thermal Resistance Junction-Ambient 3 Value Max.

Overview

AP4501SM Advanced Power Electronics Corp.

▼ Simple Drive Requirement ▼ Low On-resistance ▼ Schottky Diode Included D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 S2 30V 33mΩ 6A -30V 50mΩ -5.

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