Datasheet Details
| Part number | AP4506GEH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 132.74 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP4506GEH-HF Datasheet
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| Part number | AP4506GEH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 132.74 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP4506GEH-HF Datasheet
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 +20 9 7.2 50 3.1 -55 to 150 -55 to 150 P-channel -30 +20 -8 -6.4 -50 Units V V A A A W ℃ ℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 8 40 Unit ℃/W ℃/W 1 201303213 Data and specifications subject to change without notice Free Datasheet http://www.Datasheet-PDF.com/ AP4506GEH-HF N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=30V, VGS=0V VGS=+20V, VDS=0V ID=6A VDS=24V VGS=4.5V VDS=15V ID=6A RG=3.3Ω,VGS=10V RD=2.5Ω VGS=0V VDS=25V f=1.0MHz Min.
30 1 Typ.
AP4506GEH-HF Halogen-Free Product Advanced Power Electronics Corp.
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