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AP4880GEM Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ±16 14 11 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

Overview

AP4880GEM Pb Free Plating Product Advanced Power Electronics Corp.

▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Low On-resistance ▼ RoHS Compliant SO-8 S D G D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S S 25V 8.

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