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AP4955M - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AP4955M Advanced Power Electronics Corp. ▼ Simple Drive Requirement D2 D2 D1 D1 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 S1 G1 -20V 45mΩ -5.6A ▼ Low Gate Charge ▼ Fast Switching Characteristic ID Description TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±20 -5.6 -4.5 20 2 0.