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AP80N03GP-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

General Description

AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Advanced Power Electronics Corp. AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 8mΩ ▼ Simple Drive Requirement G ID ▼ RoHS Compliant & Halogen-Free S 80A Description AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G DS TO-220(P) The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.