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AP80N03GS-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Download the AP80N03GS-HF datasheet PDF. This datasheet also covers the AP80N03GP-HF variant, as both devices belong to the same n-channel insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP80N03GP-HF-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP80N03GP-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP80N03S N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP80N30W N-Channel MOSFET
AP80N30W-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP80SL400AI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 8mΩ ▼ Simple Drive Requirement G ID ▼ RoHS Compliant & Halogen-Free S 80A Description AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G DS TO-220(P) The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.