Download AP85L02H Datasheet PDF
Advanced Power Electronics Corp
AP85L02H
AP85L02H is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description The TO-252 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85L02J) is available for low-profile applications. BVDSS RDS(ON) ID 25V 6mΩ 85A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient TO-251(J) Rating 25 ± 20 85 53 310 96...