Datasheet Details
| Part number | AP88N30W |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 101.58 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP88N30W Datasheet
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| Part number | AP88N30W |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 101.58 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP88N30W Datasheet
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AP88N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device.
G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM IDR IDR(PULSE) PD@TC=25℃ IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 300 ±30 88 270 88 1 Units V V A A A A W W/℃ A mJ ℃ ℃ Body-Drain Diode Reverse Drain Current Body-Drain Diode Reverse Drain Peak Current Total Power Dissipation Linear Derating Factor Avalanche Current 3 3 176 150 1.2 30 45 -55 to 150 -55 to 150 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
AP88N30W RoHS-compliant Product Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
| AP88N30W-HF-3 | N-channel Enhancement-mode Power MOSFET |
| AP88L02P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP80N03GP-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP80N03GS-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP80N03S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80N30W | N-Channel MOSFET |
| AP80N30W-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80SL400AI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80SL400AS | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |