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AP9915GK - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ±12 6.2 5 30 3.2 0.025 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

40 Unit ℃/W Data and specifications subject to change without notice 200615051-1/4 AP9915GK Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o Test Conditions VGS=0V, ID=250uA Min.

Overview

AP9915GK Pb Free Plating Product Advanced Power Electronics Corp.

▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic www.DataSheet4U.com ▼ RoHS N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D S D SOT-223 G 20V 50mΩ 6.