Datasheet4U Logo Datasheet4U.com

AP9915K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP9915K

Datasheet Details

Part number AP9915K
Manufacturer Advanced Power Electronics
File Size 139.53 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9915K Datasheet
Additional preview pages of the AP9915K datasheet.

📁 Similar Datasheet

  • AP9926A - 20V N+N-Channel Enhancement Mode MOSFET (APM)
  • AP9971AGM - Dual N-Channel MOSFET (VBsemi)
  • AP9971GH - N-Channel MOSFET (VBsemi)
  • AP9971GI-HF - N-Channel 60V MOSFET (VBsemi)
  • AP9972GS - N-Channel 60V MOSFET (VBsemi)
  • AP9974AGP - N-Channel 60V MOSFET (VBsemi)
  • AP9974GP - N-Channel 60-V MOSFET (VBsemi)
  • AP9980GM-HF - N-Channel 80V MOSFET (VBsemi)
  • AP9997GH - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • AP9997GK - N-Channel 100V MOSFET (VBsemi)
Other Datasheets by Advanced Power Electronics
  • AP9915GK - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9915GK-HF-3 - N-channel Enhancement-mode Power MOSFET
  • AP9915H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9915J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9912H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9912J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9916GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9916GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP9915K Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D S D SOT-223 G 20V 50mΩ 6.2A RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ±12 6.2 5 30 3.2 0.
Published: |