Datasheet4U Logo Datasheet4U.com

AP9916GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP9916GH

Datasheet Details

Part number AP9916GH
Manufacturer Advanced Power Electronics
File Size 80.39 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9916GH Datasheet
Additional preview pages of the AP9916GH datasheet.

📁 Similar Datasheet

  • AP9926A - 20V N+N-Channel Enhancement Mode MOSFET (APM)
  • AP9971AGM - Dual N-Channel MOSFET (VBsemi)
  • AP9971GH - N-Channel MOSFET (VBsemi)
  • AP9971GI-HF - N-Channel 60V MOSFET (VBsemi)
  • AP9972GS - N-Channel 60V MOSFET (VBsemi)
  • AP9974AGP - N-Channel 60V MOSFET (VBsemi)
  • AP9974GP - N-Channel 60-V MOSFET (VBsemi)
  • AP9980GM-HF - N-Channel 80V MOSFET (VBsemi)
  • AP9997GH - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • AP9997GK - N-Channel 100V MOSFET (VBsemi)
Other Datasheets by Advanced Power Electronics
  • AP9916GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9916H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9916J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9912H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9912J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9915GK - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9915GK-HF-3 - N-channel Enhancement-mode Power MOSFET
  • AP9915H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP9916GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Surface mount package S G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252 G D S TO-251 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 ±8 35 16 90 50 0.
Published: |