AP9916GJ Datasheet PDF - Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Specs

AP9916GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9916GJ, a member of the AP9916GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Datasheet Details

Part number	AP9916GJ
Manufacturer	Advanced Power Electronics
File Size	80.39 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP9916GJ Datasheet
Additional preview pages of the AP9916GJ datasheet.

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Full PDF Text Transcription

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AP9916GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Surface mount package S G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252 G D S TO-251 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 ±8 35 16 90 50 0.

Published: Sep 27, 2014 |