AP9916J Datasheet PDF - Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Specs

AP9916J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9916J, a member of the AP9916H N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Datasheet Details

Part number	AP9916J
Manufacturer	Advanced Power Electronics
File Size	119.39 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP9916J Datasheet
Additional preview pages of the AP9916J datasheet.

📁 Similar Datasheet

AP9926A - 20V N+N-Channel Enhancement Mode MOSFET (APM)

AP9971AGM - Dual N-Channel MOSFET (VBsemi)

AP9971GH - N-Channel MOSFET (VBsemi)

AP9971GI-HF - N-Channel 60V MOSFET (VBsemi)

AP9972GS - N-Channel 60V MOSFET (VBsemi)

AP9974AGP - N-Channel 60V MOSFET (VBsemi)

AP9974GP - N-Channel 60-V MOSFET (VBsemi)

AP9980GM-HF - N-Channel 80V MOSFET (VBsemi)

AP9997GH - N-Channel MOSFET Transistor (Inchange Semiconductor)

AP9997GK - N-Channel 100V MOSFET (VBsemi)

Full PDF Text Transcription

Click to expand full text

AP9916H/J Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current www.DataSheet4U.com ▼ Single N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 18V 25mΩ 35A G S Drive Requirement Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 ± 12 35 16 90 50 0.

Published: May 2, 2008 |