AP9915J Datasheet PDF - Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Specs

AP9915J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9915J, a member of the AP9915H N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Datasheet Details

Part number	AP9915J
Manufacturer	Advanced Power Electronics
File Size	116.45 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP9915J Datasheet
Additional preview pages of the AP9915J datasheet.

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Full PDF Text Transcription

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AP9915H/J Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current www.DataSheet4U.com ▼ Single N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 50mΩ 20A G S Drive Requirement Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 ± 12 20 16 41 26 0.

Published: May 2, 2008 |