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Advanced Power Electronics

AP9924AGO-HF Datasheet Preview

AP9924AGO-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP9924AGO-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Halogen Free & RoHS Compliant Product
BVDSS
RDS(ON)
ID
20V
22mΩ
5A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
S2
S2
D
TSSOP-8
D
G1
S1
S1
D
D
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G1 G2
S1
Rating
20
+8
5
4
20
0.83
-55 to 150
-55 to 150
S2
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
150
Unit
/W
1
200907161
Free Datasheet http://www.datasheet4u.com/




Advanced Power Electronics

AP9924AGO-HF Datasheet Preview

AP9924AGO-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9924AGO-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=4.5V, ID=5A
VGS=2.5V, ID=3A
VDS=VGS, ID=250uA
VDS=5V, ID=5A
VDS=20V, VGS=0V
VGS= +8V, VDS=0V
ID=5A
VDS=16V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3Ω,VGS=5V
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
f=1.0MHz
20 - - V
- - 22 m
- - 30 m
0.25 - 1 V
- 18 -
S
- - 10 uA
- - +100 nA
- 7.2 11.5 nC
- 0.6 - nC
- 3.4 - nC
- 6.2 - ns
- 10 - ns
- 15 - ns
- 5 - ns
- 275 440 pF
- 95 - pF
- 85 - pF
- 2.2 -
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=0.7A, VGS=0V
IS=2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 18.5 - ns
- 9 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 250/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Free Datasheet http://www.datasheet4u.com/


Part Number AP9924AGO-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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