Datasheet4U Logo Datasheet4U.com

AP9930GM-HF-3 Datasheet Power MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The AP9930GM-HF-3 is in a standard SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives.

P2G P1N1D P2N2D N1G N1S N2S N2G Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 5.5 4.4 20 1.38 0.011 -55 to 150 -55 to 150 P-channel -30 ±20 -4.1 -3.3 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit °C/W Ordering Information AP9930GM-HF-3TR : in RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2010 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Full Bridge Applications RoHS-compliant, halogen-free SO-8 P2G N2D/P2D P1S/P2S P1G N2G N1S/N2S N1D/P1D N1G N-CH BV DSS RDS(ON) ID BVDSS RDS(ON) ID P1S P1G P2S 30V 33mΩ 5.5A -30V 55mΩ -4.