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AP9930GM - POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP9930GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance www.DataSheet4U.com P1S/P2S P1G P2G N2D/P2D 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) N2G N1S/N2S N1D/P1D 30V 33mΩ 5.5A -30V 55mΩ -4.1A ▼ Full Bridge Application on LCD Monitor Inverter ID P-CH BVDSS RDS(ON) ID P1S P1G P2S SO-8 N1G Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.