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Advanced Power Electronics

AP9960GD Datasheet Preview

AP9960GD Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP9960GD
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Fast Switching Speed
PDIP-8 Package
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
40V
25mΩ
7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
40
± 20
7
5.6
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
62.5
Unit
/W
Data and specifications subject to change without notice
200528031




Advanced Power Electronics

AP9960GD Datasheet Preview

AP9960GD Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9960GD
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
VDS=10V, ID=7A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ± 20V
ID=7A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=20V
Rise Time
Turn-off Delay Time
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
RD=20Ω
Input Capacitance
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
40 - - V
- 0.032 - V/
- - 25 mΩ
- - 40 mΩ
1 - 3V
- 25 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 14.7 -
- 7.1 -
- 6.8 -
- 11.5 -
nC
nC
nC
ns
- 6.3 - ns
- 28.2 - ns
- 12.6 -
- 1725 -
- 235 -
- 145 -
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
IS=2.3A, VGS=0V
Min. Typ. Max. Units
- - 1.54 A
- - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in2 copper pad of FR4 board ; 90/W when mounted on Min. copper pad.


Part Number AP9960GD
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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