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AP9960AGM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP9960AGM-HF
Manufacturer Advanced Power Electronics
File Size 98.70 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Advanced Power Electronics Corp. AP9960AGM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description AP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G1 BVDSS RDS(ON) ID D1 G2 S1 40V 16mΩ 8.
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