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AP9960GD - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Part number AP9960GD
Manufacturer Advanced Power Electronics
File Size 70.44 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.G1 BVDSS RDS(ON) ID D1 G2 S1 40V 25mΩ 7A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Der

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