| Part number | AP9960GD |
|---|---|
| Datasheet | AP9960GD-AdvancedPowerElectronics.pdf |
| File Size | 70.44 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 200528031 AP9960GD @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Units - - 1.54 A - - 1.3 V Notes:.
See all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
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| AP9960GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GM-HF | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9960M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9962AGH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
