AP9960GD Overview
D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 200528031 AP9960GD @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Units - - 1.54 A - - 1.3 V Notes:.