AP9960GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp

General Description

resistance and fast switching performance.

designer with an extreme efficient device for use in a wide range of power applications.

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AP9960GM-HF dual n-channel enhancement mode power mosfet by Advanced Power Electronics Corp - Datasheet Preview

Datasheet Details

Part number	AP9960GM-HF
Manufacturer	Advanced Power Electronics Corp
File Size	62.08 KB
Description	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP9960GM-HF Datasheet

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Advanced Power Electronics Corp. AP9960GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 40V 20mΩ 7.8A Description AP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- D1 D2 resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 G2 S1 S2 The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.