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Advanced Power Electronics

AP9960GM-HF Datasheet Preview

AP9960GM-HF Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP9960GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Low On-Resistance
Fast Switching Speed
Surface Mount Package
RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
40V
20mΩ
7.8A
Description
AP9960 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
D1 D2
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G1
G2
S1 S2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
40
+ 20
7.8
6.2
20
2
0.016
-55 to 150
-55 to 150
V
V
A
A
A
W
W/
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201501093




Advanced Power Electronics

AP9960GM-HF Datasheet Preview

AP9960GM-HF Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9960GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=7A
Drain-Source Leakage Current
VDS=40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=32V ,VGS=0V
Gate-Source Leakage
VGS= +20V, VDS=0V
Total Gate Charge
ID=7A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
VDS=20V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=20Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
40 - - V
- 0.032 - V/
- - 20 mΩ
- - 32 mΩ
1-3
- 25 -
V
S
- - 1 uA
- - 25 uA
- - +100 nA
- 14.7 - nC
- 7.1 - nC
- 6.8 - nC
- 11.5 - ns
- 6.3 - ns
- 28.2 - ns
- 12.6 - ns
- 1725 -
- 235 -
- 145 -
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=2.3A, VGS=0V
Min. Typ. Max. Units
- - 1.54 A
- - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP9960GM-HF
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 7 Pages
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