AP9960GM-HF Datasheet | Advanced Power Electronics Corp

Description AP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- D1 D2 resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 G2 S1 S2 The SO-8 package is widely preferred for all mercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 40 + 20 7.8 6.2 20 2 0.016 -55 to 150 -55 to 150 V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501093 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250u A Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A Static Drain-Source On-Resistance2 VGS=10V, ID=7A VGS=4.5V, ID=5A Gate Threshold Voltage VDS=VGS, ID=250u...