AP9960M Datasheet | Advanced Power Electronics Corp

Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 Absolute Maximum Ratings .Data Sheet.net/ Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 7.8 6.2 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice Datasheet pdf - http://..co.kr/ Electrical Characteristics@T j=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 40 1 - Typ. 0.032 Max. Units 20 32 3 1 25 ±100 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A VDS=VGS, ID=250u A VDS=10V, ID=7A 25 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= ± 20V ID=7A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω .Data Sheet.net/ Gate-Source Leakage Total Gate...