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Advanced Power Electronics

AP9962AGJ-HF-3 Datasheet Preview

AP9962AGJ-HF-3 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Advanced Power
Electronics Corp.
AP9962AGH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Fast Switching Characteristics
Low On-resistance
RoHS-compliant, halogen-free
G
D
S
BV DSS
R DS(ON)
ID
40V
20m
32A
Description
D (tab)
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
GDS
The AP9962AGH-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP9962AGJ-HF-3) is
available where a small PCB footprint is required.
GD
S
Absolute Maximum Ratings
TO-252 (H)
D (tab)
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
± 20
32
20
120
27.8
0.22
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Value
4.5
62.5
110
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
Ordering Information
AP9962AGH-HF-3TR : in RoHS-compliant, halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
AP9962AGJ-HF-3TB : in RoHS-compliant, halogen-free TO-251 shipped in tubes (80pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200906104-3 1/6




Advanced Power Electronics

AP9962AGJ-HF-3 Datasheet Preview

AP9962AGJ-HF-3 Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Advanced Power
Electronics Corp.
AP9962AGH/J-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
VGS=4.5V, ID=16A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=20A
Drain-Source Leakage Current
VDS=40V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=32V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
VGS= ±20V, VDS=0V
ID=20A
VDS=32V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=20V
Rise Time
Turn-off Delay Time
Fall Time
ID=20A
RG=3.3, V GS=10V
RD=1.0
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
40 -
-V
- - 20 m
- - 30 m
1 - 3V
- 40 - S
- - 10 uA
- - 250 uA
- - ±100 nA
- 12 20 nC
- 2.7 - nC
- 7.8 - nC
- 7 - ns
- 46 - ns
- 20 - ns
- 6 - ns
- 820 1800 pF
- 95 - pF
- 90 - pF
Min. Typ. Max. Units
- - 1.2 V
- 19 - ns
- 13 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/6


Part Number AP9962AGJ-HF-3
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 6 Pages
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