Advanced Power
Electronics Corp.
AP9962AGH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Fast Switching Characteristics
Low On-resistance
RoHS-compliant, halogen-free
G
D
S
BV DSS
R DS(ON)
ID
40V
20mΩ
32A
Description
D (tab)
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
GDS
The AP9962AGH-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP9962AGJ-HF-3) is
available where a small PCB footprint is required.
GD
S
Absolute Maximum Ratings
TO-252 (H)
D (tab)
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
± 20
32
20
120
27.8
0.22
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Value
4.5
62.5
110
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
Ordering Information
AP9962AGH-HF-3TR : in RoHS-compliant, halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
AP9962AGJ-HF-3TB : in RoHS-compliant, halogen-free TO-251 shipped in tubes (80pcs/tube)
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www.a-powerusa.com
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