AP9971AGJ-HF Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-252 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9971AGJ) are available for low-profile applications. TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating 60 +20 22 14 80 34.7 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3.6 110 Units ℃/W ℃/W 1 201305142 Data and specifications subject to change without notice AP9971AGH/J-HF Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=1m A VGS=10V, ID=15A VGS=6V, ID=10A Min. 60 1 - Typ. 12.4 17 2.5 6.4 6.6 22 17 4.3 625 90 65 Max. Units 36 50 3 10 100 +100 27 1000 V mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250u A VDS=10V, ID=15A VDS=60V, VGS=0V VGS= +20V, VDS=0V ID=15A VDS=48V VGS=10V VDS=30V ID=15A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz Drain-Source Leakage Current (T j=150 C) VDS=48V ,VGS=0V Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance...