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Advanced Power Electronics

AP9971AGM-HF Datasheet Preview

AP9971AGM-HF Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP9971AGM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Low On-resistance
Simple Drive Requirement
Surface Mount Package
RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
Description
AP9971A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
60V
50mΩ
5A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=100
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
60 V
+25 V
5A
3.2 A
30 A
PD@TA=25
Total Power Dissipation
2W
Linear Derating Factor
0.016
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201501074




Advanced Power Electronics

AP9971AGM-HF Datasheet Preview

AP9971AGM-HF Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9971AGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=2.5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=60V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V
Gate-Source Leakage
VGS=+25V, VDS=0V
Total Gate Charge
ID=5A
Gate-Source Charge
VDS=48V
Gate-Drain ("Miller") Charge
VGS=10V
Turn-on Delay Time
VDS=30V
Rise Time
ID=5A
Turn-off Delay Time
RG=3.3,VGS=10V
Fall Time
RD=6
Input Capacitance
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
60 - - V
- - 50 mΩ
- - 60 mΩ
1 - 3V
- 4.8 -
S
- - 1 uA
- - 25 uA
- - +100 nA
- 17.5 28 nC
- 2 - nC
- 6.3 - nC
- 5.5 - ns
- 12 - ns
- 18 - ns
- 4 - ns
- 650 1040 pF
- 85 - pF
- 60 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 27 - ns
- 32 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP9971AGM-HF
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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