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AP9997GM Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP9997GM RoHS-pliant Product Advanced Power Electronics Corp.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for mercial -industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 95 ±20 3 2.3 20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200803063 Free Datasheet http://../ AP9997GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=3A VGS=4.5V, ID=2A Min.

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