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AP9T15GJ-HF - N-channel Enhancement mode Power MOSFET

This page provides the datasheet information for the AP9T15GJ-HF, a member of the AP9T15GH-HF N-channel Enhancement mode Power MOSFET family.

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Full PDF Text Transcription

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AP9T15GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Single Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 50mΩ 12.5A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 20 +16 12.5 8 60 12.5 0.
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